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Japanese group rebuts charges on chip market

Article Abstract:

The Japanese electronics industry is defending its actions consequent to accusations from US computer-chip makers that the bilateral semiconductor trade agreement signed in 1991 is not being met. The Electronic Industries Association of Japan issued statements claiming the US companies are not trying hard to enough to penetrate the Japanese market and that the goal of reaching 20 percent of the market in Japan is only a conceptual goal for US companies. US companies claimed the pact was too weak when it was signed. US chip sales in Japan have not grown above 14.3 percent in over one year. Executives representing several American computer-chip makers will pressure US government officials for possible trade sanctions. The Ministry of International Trade and Industry will sponsor a meeting between Japanese and US chip makers to discuss the trade pact.

Author: Schlesinger, Jacob M.
Publisher: Dow Jones & Company, Inc.
Publication Name: The Wall Street Journal Western Edition
Subject: Business, general
ISSN: 0193-2241
Year: 1992
United States, Japan, Integrated circuits, International trade, Economic policy, Japanese foreign relations, United States foreign relations, International competition (Economics), Market share, Japanese Competition, Foreign Competition, Electronic Industries Association of Japan

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Two makers of microchips broaden ties; Hitachi, Texas Instruments enter a 10-year pact in effort to ease costs

Article Abstract:

Hitachi Ltd and Texas Instruments Inc move beyond their 1988 basic technology exchange agreement to sign a 10 year pact that will see the two semiconductor vendors jointly designing and developing products for market in the mid to late 1990s. The agreement comes at a time when Texas Instruments has been experiencing losses and Hitachi, though profitable, is seeing a fall in its profits. The agreement covers the development of dynamic random-access memories (DRAM), a chip that can support as much as 64M-bits of memory, as well as low-volume production work. High-volume production, however, will remain separate. The team will try to shrink DRAM wiring to 0.35 microns. All joint developments will take place at the Hitachi site in Japan, with staff members from both firms.

Author: Schlesinger, Jacob M.
Publisher: Dow Jones & Company, Inc.
Publication Name: The Wall Street Journal Western Edition
Subject: Business, general
ISSN: 0193-2241
Year: 1991
Semiconductor devices, Electronic components, Industrial research, Contracts, Product development, Hitachi Ltd., DRAM (Dynamic random access memory), DRAM, Research and Development, Outlook, Semiconductor Device, Cooperative Agreements

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Subjects list: Semiconductor industry
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