Condensed-phase transitions during effusion of gallium selenide

Article Abstract:

Analysis of gallium sesquiselenide, Ga2Se3, using simultaneous Knudsen effusion and torsion effusion showed that anomalous results were caused by condensed phase transition at 1225plus/minus 10 K, a range at which both condensed phases reach equilibrium with the vapor. Ga2Se(g) and Se2(g) were the principal products of congruent effusion below the given temperature range, while same species results were obtained above the given range.

Thin films, Chemical reactions, Vaporization, Heats of, Heat of vaporization

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On nucleation of cubic boron nitride in the BN-MgB (sub)2 system

Article Abstract:

Formation of cubic boron nitride in the MgB (sub)2-BN system at pressures to 6.8 GPa and temperatures to 2000 K has been studied by means of X-ray powder diffraction with synchrotron radiation. The position of cBN crystallization high-temperature boundary has been specified.

Ukraine, Usage, X-rays, Crystallization, Nucleation, Nucleation (Chemistry), Boron nitride

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Enthalpy of formation of gallium nitride

Article Abstract:

A new study investigates the enthalpy of formation of gallium nitride using calorimetric measurement.

Semiconductors

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