Dynamics of hydrides on hydrogen-terminated silicon (111)-(1x1) surface

Article Abstract:

The characterization of silicon 111 (Si(111)) surface treated with 40% NH4F solution was done using x-ray photoelectron spectroscopy and static secondary ion mass spectrometry. As-treated Si(111) surface was predominately terminated with monohydrides and free of contamination. Two distinct mechanisms were observed. First, dihydride terminated step silicon atoms were dissolved much faster than defect-free monohydride terminated ones. Second, dihydrides in the corner of (110) zigzag enclosed characteristic triangular pits led to fast erosion of silicon atoms.

X-ray spectroscopy, Very-large-scale integration, Very large scale integration

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Silicon etching during the HFCVD diamond growth

Article Abstract:

Research was conducted to examine the silicon etching that takes place during the chemical vapor deposition (CVD) diamond growth as a function of the methane content in the gas phase using scanning electron microscopy and atomic force microscopy. AFM experiments were performed in the tapping mode on a Nanoscope III microscope. Diamond was grown by the hot filament chemical vapor deposition method. Results indicate that the etching of silicon is generally detrimental as generating low-density silicon surface such as Si(100).

Growth, Diamonds, Chemical vapor deposition

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Compatibility relationship among reaction equilibria, equivalence principle of reaction approaches, and silicon contamination in semiconductors

Article Abstract:

A study on the silicon contamination in semiconductors such as GaAs suggested that all the solid-state and liquid-state Si contamination activities can be standardized. Standardization of Si contamination can be obtained by determining the compatibility relationship among various reaction equilibria to arrive at an equivalence principle. The compatibility relationship was also found to be an important factor for understanding chemical thermodynamics.

Thermodynamics

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