III-V nitride epilayers for photoelectrochemical water splitting: GaPN and GaAsPN

Article Abstract:

The epilayers of single-crystal GaAsPN and GaPN semiconductor samples with varying nitrogen compositions are characterized photochemically to determine their potential to serve as water splitting photoelectrodes. The results have shown that GaPN displayed good stability toward photocorrosion, whereas GaAsPN showed enhanced photocorrosion as compared to GaP.

Industrial Gas Manufacturing, Industrial gases, Nitrogen, Industrial inorganic chemicals, not elsewhere classified, Gallium Compounds, Nitrogen (Chemical element), Photochemical research

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Suppression of band edge migration at the p-GaInP2/H2O interface under illumination via catalysis

Article Abstract:

A study showed that the p-GaInP2 band edges migrate negatively under illumination in solutions with pH ranging from 1 to 14.5. The displacement is not due to a change in the pH of the semiconductor microenvironment but is because of the accumulation of photogenerated electrons at the interface due to poor interfacial charge-transfer kinetics.

Chemical reactions

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NMR characterization and rietveld refinement of the structure of rehydrated AIPO4-34

Article Abstract:

The triclinic form of AlPO4-34, a microporous aluminophosphate with the chabazite (CHA) topology, adopts a rhombohedral symmetry upon calcination. Following these structural changes in situ by X-ray diffraction revealed that there are actually two stable rehydrated phases, which differ from each other by one water molecule in the channel.

Structure, Chemical compounds

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