Frequency dependence of GaAs FET equivalent circuit elements extracted from the measured two-port S parameters

Article Abstract:

A technique is developed for determining and optimizing circuit element values for GaAs FETs from eight measured independent data values of the two-port S parameters of an eight-element equivalent circuit. A ten-element equivalent circuit can closely predict GaAs FET wafer parameters S parameters up to 18GHz. Inductances are needed in both equivalent circuits to correct for frequency dependence. Development, equations, and validation of the equivalency circuit functioning are described.

Systems analysis, Product introduction, Modeling, Data modeling software, System Design, Simulation, Parameters, Gallium Arsenide Semiconductor, New Technique, Transistor, Frequency, technical

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Use of a surface-acoustic-wave (SAW) device to monitor etching of thin films

Article Abstract:

A surface-acoustic-wave (SAW) device can monitor etching of thin films. The oscillation path of a delay-line-stabilized SAW is coated with a film of the material to be etched. As material is removed, the mass loading decreases, increasing the oscillator frequency. This method allows measurement of substrate temperature, as well as the mass of material removed.

Thin films, Acoustic Devices, Oscillators

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