GaAs Schottky diodes for THz mixing applications

Article Abstract:

GaAs Schottky barrier diodes used in mixing applications at frequencies ranging from 1 terahertz (THz) to about 5 THz are discussed; the devices are the critical mixer element in heterodyne receivers for various scientific applications. One of the most important developments allowing GaAs Schottky technology to be useful at THz frequencies was the development by Young and Irvin of the first 'honeycomb' Schottky diode chip, which combined modern semiconductor processing with a diode structure that minimized parasitic series resistance and shunt capacitance. The three diode parameters that can be varied to optimize performance are anode diameter, epitaxial layer doping density, and epitaxial layer thickness. It has been shown that smaller anode diameters and more highly doped epitaxial layers improve performance at THz frequencies.

Circuit design, Telecommunications, Diodes, Technical, Models, Communications Technology, Receiver, Frequency, Schottky TTL

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Radiation effects in GaAs FET devices

Article Abstract:

Tests were conducted to determine the effects of nuclear and cosmic radiation on gallium-arsenide (GaAs) devices used in field-effect transistors and integrated circuits. Highly doped static RAMs proved stable under total dose ionizing radiation. Device degradation is minimal under prolonged exposure to gamma rays. Undoped GaAs FET's are susceptible to permanent damage. GaAs SRAMs are vulnerable to soft errors caused by cosmic rays and other incident radiation. Decoupling resistors and radiation shielding can minimize damage. The full exploitation of GaAs technology in integrated circuits demands improvements in integration levels and architecture as well as radiation hardness.

Tests, Field effect transistors, Radiation, Study, Testing, Gallium Arsenide Semiconductor, Tolerance, technical, Field-Effect Transistors

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