Power semiconductor devices: an overview

Article Abstract:

Silicon gate technology and wafer fabrication techniques enabled the development of power semiconductor devices that have become vital to power electronics applications. Properties of such devices include blocking of specific voltages in off state, forwarding of required voltage in on state, and dynamic storage and switching factors. Use of integrated circuit (IC) design techniques have reduced the size of power ICs, but limiting voltage, current, and switching requirements limit further reduction. Trends in power device design include use of self-aligned, double-diffused MOS gate structure and movement towards one-dimensional devices. Technological trends affecting power IC fabrication include: use of trenches for improved density, direct wafer bonding for accessing buried surfaces, cellular bipolar transistor fabrication, new junction termination designs, and power ICs.

Electronic components, not elsewhere classified, Systems analysis, Integrated circuit fabrication, Power semiconductor devices, Trends, Outlook, System Design, Applications

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Optoelectronic integrated circuits

Article Abstract:

The needs of several generic photonic systems for advanced optoelectronic chips are discussed. Systems included are: optical computing and signal processing, optical interconnects, LANs, and optical communication. The needs of these systems are now being met by the fabrication of high-performance and highly functional integrated transmitters, receivers, modulators, and arrays of these devices. Examples of such archetype integrated circuits which serve to illustrate advances in and challenges to the new technology are discussed. Material growth technology is the foundation of the hierarchy of systems and devices considered. The pace of development is set by the rapidity of advances in epitaxial materials growth technology.

Integrated circuits, Optoelectronic devices, Local area networks, LAN, Optical Computers

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