Radiation effects on microelectronics in space

Article Abstract:

An understanding of the effects of space radiation on silicon, silicon dioxide, and gallium-arsenide materials and microelectronic devices can facilitate the systematic development of radiation-hardened circuits and devices. The major kinds of particles than can affect microelectronic circuits include electrons, protons, photons, alpha particles, and heavier ions. Many different kinds of interactions can occur between the mass, charge, and kinetic energy properties of the particles and the mass, charge, and density properties of the on-board electronics. The nature of these interactions on a variety of electronic, optoelectronic, quartz oscillator, and magnetic devices and circuits is extensively described. Ways of simulating the space radiation environment to assess these impacts and hardening strategies are also discussed.

Integrated circuits, Design, Microelectronics, Failure Prediction

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The space radiation environment for electronics

Article Abstract:

The earth's space radiation environment can cause major damage to the functioning capabilities of spacecraft electronics, but careful design, selection, and shielding of such systems can ensure high, continuing performance in space. The space radiation environment is of three types: the earth's natural trapped radiation environment, consisting of electrons, protons, and heavy ions; transiting radiation, consisting of solar and galactic contributions, such as solar flare protons, solar heavy ions and high energy galactic cosmic rays; and spacecraft internal radiation and secondary radiation generated by the interaction of outside radiation and spacecraft materials. Impacts of the various forms of radiation on semiconductor devices and strategies for and effects of shielding are described.

Satellites (Astronomical bodies), Satellites, Shielding

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