Abstracts - faqs.org

Abstracts

Electronics

Search abstracts:
Abstracts » Electronics

Radiation testing of semiconductor devices for space electronics

Article Abstract:

Radiation effects testing, hardness assurance, and part testing of semiconductor devices that will be used in spacecraft on-board systems requires an understanding of the space radiation environment and the radiation effects on spacecraft electronics. The near-earth space radiation environment consists mainly of electrons and protons in trapped radiation belts, transient solar flare radiation, and deep-space cosmic rays. The major effects on microelectronic devices are ionization or total dose effects in dielectrics, single-particle transient ionization in silicon and displacement damage in silicon. The goals of radiation testing are to understand the interactions of radiation with circuits leading to failure, characterize response nature of device technologies for part selection, and determine lot acceptability. Part selection and hardness assurance are also described.

Author: Pease, Ronald L., Johnston, Allan H., Azarewicz, Joseph L.
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
Semiconductor devices, Electronic components, Electronics, Tests, Reliability (Trustworthiness), Reliability, Semiconductor Device, Testing, Space Craft, On-Board Systems, Methods, Failure Prediction

User Contributions:

Comment about this article or add new information about this topic:

CAPTCHA


The design of radiation-hardened ICs for space: a compendium of approaches

Article Abstract:

Five major technologies for the design, development, and fabrication of radiation-hardened integrated circuits (RHICs) for spaceborne applications are described are reviewed. All are still susceptible to single-event impacts, and total ionizing radiation-dose effects can affect technologies with oxide contacting active devices. The increasing number of commercial and defense systems in space has made it vital that RHIC devices be employed to ensure reliability and durability. RHIC development requires selection of appropriate technology, characterization of parts in a simulated application environment, simulation of chip response in the environment, and selection of optimum technology. Specific papers address the design of hardened bulk-epi CMOS ICs, CMOS-SOS ICs, bipolar digital ICs, bipolar analog ICs and gallium-arsenide SRAMs.

Author: Kerns, Sherra E., Shafer, B.D., Rockett, L.R., Jr., Pridmore, J.S., Berndt, D.F., van Vonno, N., Barber, F.E.
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
Circuit design, Integrated circuit fabrication, Systems development, System Development, CMOS, Bipolar Integrated Circuits, Semiconductor Preparation, Ruggedized Systems

User Contributions:

Comment about this article or add new information about this topic:

CAPTCHA



Subjects list: Integrated circuits, Radiation, technical
Similar abstracts:
  • Abstracts: Power semiconductor devices: an overview. Optoelectronic integrated circuits
  • Abstracts: Radiation effects on microelectronics in space. The space radiation environment for electronics
  • Abstracts: Modulation and coding for satellite and space communications. Inter-system communications-networking
  • Abstracts: Reliability issues of Flash memory cells. Neuromorphic electronic systems
  • Abstracts: Statistical process control in semiconductor manufacturing. Discrete-index Markov-type random processes
This website is not affiliated with document authors or copyright owners. This page is provided for informational purposes only. Unintentional errors are possible.
Some parts © 2025 Advameg, Inc.