Kondo effect in a single-electron transistor

Article Abstract:

It has been possible to make measurements on single-electronic transistors (SETs) smaller than those previously constructed. These show all the anticipated aspects of the Kondo effect in a system of this kind. Zero-bias conductance is enhanced everywhere between the paired peaks, but not outside the pair. There is actually a zero-bias suppression just outside the pair, particularly to the side towards negative gate voltage where the Kondo level is not occupied.

Transistors

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Linking insulator-to-metal transitions at zero and finite magnetic fields

Article Abstract:

The magnetic-field-driven transition in a two-dimensional gallium arsenide system was investigated. The transitions exhibits the poorly understood zero-field transition, and it was found that the critical magnetic field required to produce an insulator-to-metal transition decreases continuously on increasing the carrier density, become zero at the carrier density appropriate to the zero-field transition.

Magnetic fields, Quantum Hall effect

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Observation of the two-channel Kondo effect

Article Abstract:

An experiment was conducted to demonstrate two-channel Kondo effect. Artificial atoms were combined to form extremely correlated electron system within a nano-engineered semiconductor and then tuned in situ to produce two-channel Kondo effect.

Science & research, Electric properties, Semiconductors, Electron transport, Semiconductors (Materials), Atomic properties, Report

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