Origin of the metallic properties of heavily boron doped superconducting diamond

Article Abstract:

The properties form the basis of present day semiconductor technology and the physical properties of lightly doped semiconductor technology and the physical properties of lightly doped semiconductors are well described by electronic band structure calculations and impurity energy levels. It is shown that the doping dependent occupied electronic structures are consistent with the diamond band and indicate that holes in the band are an essential part in determining the metallic nature of heavily boron doped diamond superconductor.

United States, All Other Basic Inorganic Chemical Manufacturing, Boron & Compounds, Industrial inorganic chemicals, not elsewhere classified, Semiconductors, Semiconductors (Materials), Boron compounds, Atomic properties, Diamond films

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Determination of complex structures by combined neutron and synchrotron X-ray powder diffraction

Article Abstract:

Synchrotron X-ray and neutron powder diffraction were used together to ascertain the crystal structure of Ga2(HPO3)3.4H2O, which has 29 atoms in the asymmetric unit cell and 117 structural parameters. Using these two methods to complement each other overcomes the disparity between powder data and Rietveld profile data that had previously impeded determining crystal structure from powder diffraction.

Analysis, Usage, Crystals, X-rays, X-ray diffraction, Synchrotron, Synchrotrons, Diffraction

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