Trapped fast at the gate

Article Abstract:

An organic thin-film memory transistor that could form backbone of low-cost microelectronics ranging from radio-frequency identification tags to flexible large-area active matrix displays is reported. Such device with flash memory is achieved by introducing a second floating gate to the silicon transistor between the normal control gate which regulates the flow of current through the transistor and the semiconducting substrate.

United States, Design and construction, Flash memory, Miniature electronic equipment, Microelectronics, Radio frequency interference

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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Article Abstract:

The study reports room-temperature fabrication and performance of flexible transparent thin-film transistors (TTFTs) fabricated using In-Ga-Zn-O (a-IGZO) as an active n-channel layer. The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm(super 2)V(super -1)s(super -1), which is an order of magnitude larger than for hydrogenated amorphous silicon.

Japan, Amorphous semiconductors

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Nanometre-scale displacement sensing using a single electron transistor

Article Abstract:

The experimental realization of a device, yielding unequalled displacement sensitivity for a 116-MHz mechanical oscillator at a temperature of 30 mK is presented. It is stated that the device has displacement sensitivity at the 116.7-MHz resonant frequency of the mechanical beam, limited by the noise in the conventional electronics.

Instruments to measure electricity, Instrument Manufacturing for Measuring and Testing Electricity and Electrical Signals, Oscillators, Oscillators (Electronics)

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