Pyrolysis of tetraethoxysilane on Mo(100) at low temperatures
Article Abstract:
The results of a series of experiments on the formation of ultrathin silicon dioxide film by pyrolysis of tetraethoxysilane (TEOS) vapor on an identified single crystal transition-metal surface are presented. The pyrolysis was studied at temperatures between 300 and 860K using X-ray photoelectron spectroscopy. It was determined that TEOS is adsorbed on the Mo surface resulting in an ethoxysilyl intermediate at temperatures reaching 600K while the SiO2 is formed at the start of exposure at higher temperatures. A lesser amount of desorbed ethylene was also noticed when the deposition temperature is increased from 300 to 600K.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1998
User Contributions:
Comment about this article or add new information about this topic:
Linear free energy relations and reversible stretched exponential kinetics in systems with static or dynamical disorder
Article Abstract:
Stretched exponential relaxation occurs because of the existence of a good number of relaxation channels that have but a small probability of being open. This property of stretched exponential kinetics can be explained by the linear link between the configuration entropy generated by the random distribution of channels and the activation energy of the channel with the slowest relaxation rate and highest energy barrier. This property can be used to formulate a generalized kinetic law since the linear free energy relationship can be combined with the principle of detailed balance.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1999
User Contributions:
Comment about this article or add new information about this topic:
Extra-atomic relaxation and core-level binding energy shifts at silicon/silicon oxide interfaces: effects of cluster size on physical models
Article Abstract:
A study was conducted to examine the effects of cluster size on the extra-atomic relaxation and core-level binding energy (BE) shifts at silicon/silicon oxide interfaces. Results indicated that there are two separate thickness ranges wherein different physical mechanisms cause the thickness-dependent BE shift. Moreover, explicitly accounting for extra-atomic relaxation effects is important when assigning the BE shift of a Si 2p core level to a structural moiety.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1998
User Contributions:
Comment about this article or add new information about this topic:
- Abstracts: Langmuir study of octadecyltrimethoxysilane behavior at the air-water interface. Molecular simulation of solvent-induced Stokes shift in absorption/emission spectra of organic chromophores
- Abstracts: Physisorption of hydrogen on microporous carbon and carbon nanotubes. Synthesis and spectroscopic identification of ethylidyne adsorbed on Ni(III)
- Abstracts: A new phase of hydroquinone and its thermodynamic properties. Melting and phase space transitions in small ionic clusters
- Abstracts: Physisorption and chemisorption of alkanethiols and alkyl sulfides on Au(111). Linear dichroism measurements on oriented purple membranes between parallel polarizers: contribution of linear birefringence and applications to chromophore isomerization
- Abstracts: Segregation of chain ends is a weak contributor to increased mobility at free polymer surfaces