Making GaAs integrated circuits
Article Abstract:
Gallium arsenide (GaAs) ICs offer superior speed and radiation hardness, but converting GaAs R&D into production has proved difficult. Pilot production of LSI 16K RAMs and 6K gate arrays has begun under the auspices of the Defense Advanced Research Projects Agency. Rockwell Intl's Microelectronics R&D Center is producing GaAs ICs using ion implanted depletion mode metal semiconductor field-effect transistor (MESFET) technology, while McDonnell Douglas' Microelectronic Center is using ion implanted junction FET technology to create GaAs devices. GaAs production issues reviewed include: facilities, equipment, production and quality control, materials, and processing (wafer prep, encapsulation, lithography, metallization, deposition, pattern definition, design, yield, failure, and assembly.) Epitaxial heterostructures are an emerging technology for GaAs IC fabrication.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1988
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The new joint R&D
Article Abstract:
Collaborative R&D between multiple, often competing companies results in 'leaky' technology which is used by many firms in a common manner. Such collaborations are becoming more common in Japan, the US, and Europe, and are of two types: the secretariat and the operating entity. Advantages of joint R&D include reduced time and cost of development, faster time to market, reduced product life cycle and improved process knowledge. Secretariats are coordinating bodies for distributed R&D efforts and are exemplified by the SRC, European Community's Esprit, and the Joint European Submicron Silicon Initiative. Operating entities typically have their own R&D facilities and are exemplified by the Interuniversity Micro-Electronics Center (Leuven, Belgium) and the Microelectronics and Computer Technology Corp. Other consortia and the future of collaborative R&D are discussed.
Publication Name: Proceedings of the IEEE
Subject: Electronics
ISSN: 0018-9219
Year: 1989
User Contributions:
Comment about this article or add new information about this topic:
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