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RF power-amplifier bias controller gets US patent

Article Abstract:

Spectrian Corp. has secured a patent in the US for the design of its application-specific BiASIC integrated circuit. BiASIC is a temperature-compensating bias controller for use in high-power RF-amplifier applications. BiASIC was also developed by Spectrian to do important control capabilities for thermally-sensitive RF power circuits for the control of bipolar devices. BiASIC was also designed to satisfy the RF/wireless sector's price/performance, efficiency and size requirements.

Comment:

Secures a patent in the US for the design of its application-specific BiASIC integrated circuit

Publisher: Penton Media, Inc.
Publication Name: Microwaves & RF
Subject: Engineering and manufacturing industries
ISSN: 0745-2993
Year: 1998
Patents & copyrights, Spectrian Corp.

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Circuits control IF-amplifier modulator functions

Article Abstract:

An innovative design for intermediate-frequency, or IF, amplifiers for use in threshold-detection, radar-system, direction-finding (DF) and electronic-countermeasure (ECM) applications offers a prescribed characteristic for gains, which is inclusive of slope changes and discontinuity. IF amplifiers often have requirements for variable-gain capabilities to effectively perform their functions that require the processing of complex signals.

Comment:

Innovative design of IF amplifiers for threshold-detection, radar-sys & ECM applications offers prescribed gains characteristic

Author: Roberts, Jack T.
Publisher: Penton Media, Inc.
Publication Name: Microwaves & RF
Subject: Engineering and manufacturing industries
ISSN: 0745-2993
Year: 1998
Product specifications

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HBT power amplifier drives CDMA/AMPS handsets

Article Abstract:

RF Micro Devices of Greensboro, NC, has its RF2152 power amplifier utilized as an integrated-circuit (IC) solution for cellular handsets' demanding and complex modulation-waveform-amplification requirements. RF Micro Devices' RF2152 power amplifier offers a power-added efficiency of 38%, a linear gain of 30 dB and a linear output power of +28 dBm by employing proven GaAs heterojunction-bipolar-transistor, or HBT, technology.

Comment:

Has its RF2152 power amplifier used as an IC solution for cellular handsets' complex modulation-waveform-amplification needs

Author: DeHaan, Michael R., Augustine, Paul J.
Publisher: Penton Media, Inc.
Publication Name: Microwaves & RF
Subject: Engineering and manufacturing industries
ISSN: 0745-2993
Year: 1998
Product information, RF Micro Devices

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Subjects list: United States, Amplifiers, Article
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