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Mechanical behavior in the silicon carbide reinforced aluminum 6061 composites degraded by room or high temperature 3.5% NaCl solution

Article Abstract:

The mechanical properties of the SiCp/Al and AA6061 degraded by neutral 3.5% NaCl solution at room temperature (23 degree Celsius) and high temperature (100 degree Celsius) are investigated. Fracture surface and surface of the samples before and after immersion corrosion test are examined by an optical and scanning electron microscopes.

Author: Ahn, J. J., Ochiai, S.
Publisher: American Society of Mechanical Engineers
Publication Name: Journal of Engineering Materials and Technology
Subject: Science and technology
ISSN: 0094-4289
Year: 2004
Aluminum Compounds, Silicon Carbide, Usage, Scanning electron microscopes, Silicon carbides

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Atomistic determination of continuum mechanical properties of ion-bombarded silicon

Article Abstract:

A molecular dynamics simulation with empirical interatomic potentials is used for examining highly disordered, ion-processes silicon. The surface-free energy per unit area for the ion-bombarded silicon is found to be about 1.76 J/m(super 2).

Author: Johnson, H.T., Kalyanasundaram, N., Freund, J.B.
Publisher: American Society of Mechanical Engineers
Publication Name: Journal of Engineering Materials and Technology
Subject: Science and technology
ISSN: 0094-4289
Year: 2005
Analysis, Molecular dynamics

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Interactions of carbon atoms and dimer vacancies on the Si (001) surface

Article Abstract:

The interaction energies between carbon atoms and dimer vacancies (DVs) on the Si(001)-(2X1) surface are calculated. Self-assembled vacancy lines are observed due to the interactions between carbon atoms and DVs.

Author: Ciobanu, Cristian V., Barbu, Adrian, Briggs, Ryan M.
Publisher: American Society of Mechanical Engineers
Publication Name: Journal of Engineering Materials and Technology
Subject: Science and technology
ISSN: 0094-4289
Year: 2005
Carbon, Thermal properties, Atomic properties, Dimer acids

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Subjects list: Mechanical properties, United States, Silicon
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