Electronically soft phases in manganites

Article Abstract:

The phenomenon of colossal magnetoresistance in manganites is generally a result of competition between crystal phases with different electronic, magnetic and structural order. Nevertheless, closer inspection of phase diagrams in many manganites reveals complex phases where the two order parameters of magnetism and charge modulation unexpectedly coexist.

Electric properties, Magnetoresistance

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Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interaction

Article Abstract:

An atom-by-atom substitution technique is established using a scanning tunneling microscope and the technique used to perform a controlled study at the atomic scale of the interactions between isolated Mn acceptors, which are mediated by holes in GaAs. The results reveal a strong dependence of ferromagnetic interaction on crystallographic orientation.

Science & research, Research, Observations, Anisotropy, Scanning tunneling microscopy, Gallium arsenide, Structure

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Relativity on a chip

Article Abstract:

Relativity to manipulate the spin polarization of electrons in a semiconductor crystal has useful approach in semiconductor technology. Semiconductor spintronic commercialization promises great application of relativistic magnetic fields in electronic devices.

Semiconductors and related devices, Semiconductor Devices, Semiconductor and Related Device Manufacturing, Usage, Semiconductor device, Electron spin

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