Atomically resolved studies of the chemistry and bonding at silicon surfaces
Article Abstract:
Surface reconstructions have a significant association with the overall chemistry of silicon surface. The surface energy of Si becomes minimum when maximum number of Si atoms achieve 4-fold coordination. This accounts for most of the variations in chemical reactivity. The relatively higher complexity of phosphine and diborane originates from the substitution of Si by P or B by adsorption. This caisse lattice strain as these atoms are bigger in size to the Si atoms.
Publication Name: Chemical Reviews
Subject: Chemistry
ISSN: 0009-2665
Year: 1996
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Semiconductor surface reconstruction: the structural chemistry of two-dimensional surface compounds
Article Abstract:
The surface microstructure of semiconductors is descibed with emphasis on the lattice orientation and surface reconstruction of tetrahedrally coordinated semiconductors. The description of surface reconstruction is based on five principles. These principles make use of concepts, such as surface state bands, Fermi surface instabilities, and kinetic accessability. The semiconductors include elemental semiconductors and compound semiconductors.
Publication Name: Chemical Reviews
Subject: Chemistry
ISSN: 0009-2665
Year: 1996
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