Recent advances in VLSI layout

Article Abstract:

Advances in computer-aided design (CAD) of very-large-scale integrated (VLSI) circuits are driving application-specific integrated circuit (ASIC) market growth. The popularity of ASIC sea-of-gates and building-block technologies is largely a result of CAD tool advances which are vital to the layout of VLSI chips that are more complex, larger, with declining feature size. Four aspects of VLSI layout detailed are: placement and floor planning, routing, computational geometry (CG) and layout engines. Placement and floorplanning of sea-of-gates and building-block ASICs focus on connectivity and connectivity plus module geometry. Global and detailed routing, rip-up and rerouting are discussed. CG advances in design rule checking, gridless routing and layout compaction are described. 'Hardware accelerators,' parallel-processing systems and supercomputers are facilitating VLSI layout.

Circuit design, Computer aided design, Computer aided engineering, Application specific integrated circuits, Very large scale integration, Layout, Computer-Aided Design, Special-Purpose Computers, Routing, State-of-the-Art, Very-Large-Scale Integration, technical, Computer-Aided Engineering, Application-Specific Integrated Circuit

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Strained layer heterostructures, and their applications to MODFET's, HBT's, and lasers

Article Abstract:

Recent developments in strained layer epitaxial systems are described. Strained layers provide increased freedom in the design of technologically important heterostructures and devices that has led to the development of device structures that can be tailored for a particular application. The performance of these device structures is unmatched by lattice-matched systems. Modulation-doped field-effect transistors (MODFET) fabricated with strained InGaAs channels on gallium-arsenide (GaAs) and InP substrates are shown to have superior performance. SiGe alloys have extended the strained layer concept to elemental semiconductors. SiGe heterojunction bipolar transistors (HBT) are shown to exhibit current gains of over 5,000. Quantum well lasers with compressively strained InGaAs active layers have reduced threshold current density.

Semiconductors and related devices, Quantum electronics, Lasers, Technical, Field effect transistors, Laser, Performance improvement (Computers), Gallium Arsenide Semiconductor, Bipolar Integrated Circuits, Performance Improvement, Field-Effect Transistors

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